Chemical Mechanical Planarization Comparison Essay

Chemical Mechanical Planarization
A look and review at the models of chemical mechanical planarization.
# 3075 | 2,431 words | 26 sources | 2001 | US
Published on Sep 09, 2003 in Engineering (Chemical) , Engineering (Mechanical) , Engineering (General)

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This paper shows that one of the main concerns in Chemical Mechanical Planarization processing is the material removal rate (MRR). The paper also critically reviews the existing MRR models of CMP and compares the assumptions, application aspects and limitations of the two groups? models.

From the Paper:

"Chemical Mechanical Planarization (CMP) is the process of surface smoothing and planing by a combination of mechanical action and chemical dissolution. This process is achieved by rubbing a work piece against a polishing pad under load in the presence of chemically active slurry containing an abrasive. CMP is one of the most effective planarization technologies for achieving smaller feature size for the integrated circuit (IC) industry. "

Cite this Comparison Essay:

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Chemical Mechanical Planarization (2003, September 09) Retrieved April 23, 2021, from

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"Chemical Mechanical Planarization" 09 September 2003. Web. 23 April. 2021. <>