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A comparison and analysis of the bipolar junction transistor (BJT), the metal oxide field-effect transistor (MOSFET), and the insulated gate bipolar transistor (IGBT).
Comparison Essay # 55564 | 1,228 words ( approx. 4.9 pages ) | 6 sources | MLA | 2004 | United States
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This paper discusses modeling of bipolar junction transistors, specifically using the Ebers-Moll Model; included are graphs/charts/mathematical formulae.
Essay # 2647 | 1,041 words ( approx. 4.2 pages ) | 0 sources | 2001 | United States
$ 21.95
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