A comparison and analysis of the bipolar junction transistor (BJT), the metal oxide field-effect transistor (MOSFET), and the insulated gate bipolar transistor (IGBT).
Abstract This paper examines how, although power semiconductors were first developed in the late 1940s, they have matured significantly in sixty years and how in today's society, they can be found everywhere. They are essentially the solid-state version of the mechanical relay or the vacuum tube. Some of most common applications include motor drives, uninterruptible power supplies, audio amplifiers, and fluorescent lighting. In particular, it looks at how, for the best device suited for the job, it has become a competition between the bipolar junction transistor (BJT), the metal oxide field-effect transistor (MOSFET), and the insulated gate bipolar transistor (IGBT). It shows how each has inherent advantages over the others and how the IGBT has seemed to dominate the industry in recent years.
From the Paper "The MOSFET was introduced in the 1970s and, unlike the BJT, is a voltage controlled device. It also has three terminals, though they differ from the BJT: the source, the gate, and the drain. The source and drain diffusions are separated by the gate. The MOSFET has a p or n channel and can operate in depletion or enhancement mode. In enhancement, no current flows when the gate voltage is zero. In depletion mode, however, a narrow n channel is formed under the gate such that current will still flow when the gate voltage is zero."
This paper discusses modeling of bipolar junction transistors, specifically using the Ebers-Moll Model; included are graphs/charts/mathematical formulae.
1,041 words (approx. 4.2 pages), 0 sources, 2001, $ 36.95
Abstract This paper discusses modeling of bipolar junction transistors, specifically using the Ebers-Moll Model. The author includes charts and graphs in support of the paper, as well as mathematical formulae and calculations.
From the Paper "The purpose of this lab was to understand how models of transistor voltage and current relationships are used to explain the behavior of bipolar junction transistor (BJT) circuits.BJT circuits are used to amplify small fluctuations in input voltage or current into larger, more easily observed fluctuations in output voltage or current taken from another part of the circuit. The transistor voltages and currents are characterized by small fluctuations about their steady state, or quiescent, values."
