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Chemical Mechanical Planarization


Chemical Mechanical Planarization
A look and review at the models of chemical mechanical planarization.
2,431 words (approx. 9.7 pages) | 26 sources | 2001 United States


Paper Summary:

This paper shows that one of the main concerns in Chemical Mechanical Planarization processing is the material removal rate (MRR). The paper also critically reviews the existing MRR models of CMP and compares the assumptions, application aspects and limitations of the two groups? models.

From the Paper:

"Chemical Mechanical Planarization (CMP) is the process of surface smoothing and planing by a combination of mechanical action and chemical dissolution. This process is achieved by rubbing a work piece against a polishing pad under load in the presence of chemically active slurry containing an abrasive. CMP is one of the most effective planarization technologies for achieving smaller feature size for the integrated circuit (IC) industry. "

Cite this paper

APA Citation:

Chemical Mechanical Planarization (2012, January 15). Retrieved February 10, 2012, from http://www.academon.com/Comparison-Essay-Chemical-Mechanical-Planarization/3075

MLA Citation:

"Chemical Mechanical Planarization" 15 January 2012. Web. 10 Feb. 2012. <http://www.academon.com/Comparison-Essay-Chemical-Mechanical-Planarization/3075>




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Publisher Since:
Jan 04, 2002
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